Document Details

Document Type : Article In Journal 
Document Title :
Microwave measurements of the dielectric properties of silicon Carbide at high temperature
قياسات بالموجات الدقيقة عازلة للممتلكات من كربيد السيليكون في درجة حرارة عالية
 
Subject : Microwave measurements of the dielectric properties of silicon Carbide at high temperature 
Document Language : English 
Abstract : The dielectric properties of silicon carbide SiC have been measured using cavity perturbation technique. Three tubes with diameter 2 mm, 3 mm, and 5 mm were filled with the powerful material of SiC. The measurements were taken for each tube at different frequencies 0.615 GHz, 1.412 GHz, 2.214 GHz, 3.017 GHz and 3.820 GHz in a temperature range from 25oC to 1800oC. The electrical conductivity and the activation energy of SiC at the above frequencies and temperatures were calculated using the measured real and imaginary components of the complex permittivity. 
ISSN : 1110-6131 
Journal Name : Egypt. J. Sol., Vol 
Volume : 25 
Issue Number : 2 
Publishing Year : 1422 AH
2002 AD 
Article Type : Article 
Added Date : Wednesday, March 6, 2013 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
ثريا عبدالقادر باعراقيBaraca, thorayh Abdul QadirInvestigatorDoctoratetbaerky@kau.edu.sa

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