Document Details

Document Type : Thesis 
Document Title :
Study of some Physical Properties of Lead Selenide (PbSe) Thin Films
دراسة بعض الخصائص الفيزيائية للأغشية الرقيقة من مركب سيلينيد الرصاص
 
Subject : College of Science for Girls 
Document Language : Arabic 
Abstract : The object of this thesis was devoted to study the crystal structural and transport electrical properties of Lead Selenide thin films. For this purpose, high purity PbSe is thermally evaporated from molybdenum boat in vacuum of 10-5 Torr, on to glass substrates for structural and electrical transport measurements. The X-ray diffraction patterns of powder PbSe showed polycrystalline structural of Cubic phase with lattice constants of: a = 6.1223 Å The X- ray diffraction patterns of PbSe thin films showed the crystal structural of Cubic system and they have preferred orientation. The annealing effect is increase the degree of crystallininty. The transport electrical properties such as electrical resistivity  was studied for film of different thickness as deposited. It was found that for PbSe films the electrical conductivity is strongly affected by the sample temperature, the heat treatment and film thickness. PbSe films showed semi conducting behaviour. The dependence of electrical resistivity on film thickness showed that the electrical resistivity decrease as the film thickness increase. The activation energy ΔE1, ΔE2 of the free charge for PbSe samples was calculated using the electrical resistivity data at different temperature for different thickness was found that the activation energy decrease as the film thickness increase. Both the current-voltage characteristics and capacitance - voltage characteristics of n- PbSe / p- Si and n- PbSe / n- Si heterojunctions were studied through out this study some of the following parameters were determined in each heterojunctions: 1. The Rectification Ratio RR. 2. Series Resistance Rs and Short Circuit Resistance Rsh 3. Reverse Saturation Current Irs. 4. Diode Quality Factor n`. 5. The Built in Voltage Vb 6. The Width of the Depletion Region Wmax. 7. Barrier Height φb. Finally, the current-voltage characteristics and capacitance - voltage characteristics of n- PbSe / p- Si and n- PbSe / n- Si heterojunctions were studied. 
Supervisor : Dr.Farag Saeed Al -Hazme 
Thesis Type : Master Thesis 
Publishing Year : 1430 AH
2009 AD 
Added Date : Sunday, April 11, 2010 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
مها حسن العطاسAlattas, Maha HassanResearcherMaster 

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 26381.pdf pdf 

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